IRF7901D1 Datasheet, PDF (6/8 Pages) International Rectifier – Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode

IRF7901D1
Q1 - Control FET
30
VGS
TOP
10V
8.0V
4.5V
3.5V
3.0V
2.5V
20
2.0V
BOTTOM 0.0V
Typical Characteristics
Q2 - Synchronous FET & Schottky
50
VGS
TOP
10V
8.0V
4.5V
40
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
30
10
0.0V
250µs PULSE WIDTH
Tj = 150°C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_VSDDS, S_,o_Dur_race_in-_-T_too_S-D_or_ua_ri_cn_{e V}Vo_ol_ltt_aa_gg_ee₍(_VV₎)
Figure 12. Typical Reverse Output Characteristics
100.00
10.00
TJ = 150°C
20
10
0.0V
250µs PULSE WIDTH
Tj = 150°C
0
0.0
0.4
0.8
1.2
V_VSDD,_SSo_,u_Dr_rc_ae_i-_nT_-to_o-_SD_ora_ui_rcn_eV_Vol_ot_ltag_ge_e (₍V)₎
Figure 13. Typical Reverse Output Characteristics
100.00
10.00
TJ = 150°C
1.00
0.10
2.0
TJ = 25°C
2.5
3.0
VDS = 10V
250µs PULSE WIDTH
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Figure 14. Typical Transfer Characteristic
100
1.00
TJ = 25°C
VDS = 10V
250µs PULSE WIDTH
0.10
2.5
3.0
3.5
4.0
4.5
VGS, Gate-to-Source Voltage (V)
Figure 15. Typical Transfer Characteristic
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P_DM
t₁
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Dutyfactor D= t₁/ t ₂
2. PeakT _J = P _DM x Z _thJA + T_A
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Figure 16. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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