IRF7901D1 Datasheet, PDF (2/8 Pages) International Rectifier – Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode

IRF7901D1
Electrical Characteristics
Q1 - Control FET
Parameter
Min Typ Max
Drain-to-Source
Breakdown Voltage*
BV_DSS
30
–
–
Static Drain-Source
on Resistance*
R (on) –
DS
Gate Threshold Voltage* V_GS(th) 1.0
Drain-Source Leakage I_DSS
–
–
28 38
–
–
– 30
– 0.15
Gate-Source Leakage
Current*
I_GSS
–
– ±100
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Q_{G cont}
–
Q_{G synch}
–
Q_GS1
–
7.6 10.5
6.7 9.0
2.0 –
Post-Vth
Gate-Source Charge
Q_GS2
– 0.5 –
Gate to Drain Charge Q_GD
– 1.9 –
Switch Charge*
(Q_gs2 + Q_gd)
Q_sw
– 2.4 3.8
Output Charge*
Q_oss
– 13.5 18.0
Gate Resistance
R_G
– 3.4 –
Input Capacitance
C_iss
– 780 –
Output Capacitance
C_oss
– 430 –
Transfer Capacitance C_rss
– 30 –
Turn-On Delay Time
t_d(on)
– 7.2 –
Rise Time
t
– 13.8 –
r
Turn-Off Delay Time
t_d(off)
– 14.7 –
Fall Time
t_f
–
8
–
Source-Drain Ratings and Characteristics
Q2 - Synch FET
& Schottky
Min Typ Max Units
30 –
–V
– 23 32 mΩ
1.0 –
–V
– – 30 µA
– – 4.3 mA
– – ±100 nA
– 15.5 21.0
– 13.5 18.3
– 5.5 –
– 0.9 – nC
– 4.7 –
– 5.6 9.0
– 9.0 12.3
– 4.3 – Ω
– 1810 –
– 310 – pF
– 110 –
– 10.4 –
– 16.4 – ns
– 14.6 –
– 5.2 –
Conditions
V_GS = 0V, I_D = 250µA
V
GS
=
4.5V,
I
D
=
5A‚
V_DS = V_GS, I_D = 250µA
V_DS = 24V, V_GS = 0
V_DS = 24V, V_GS = 0, T_J = 125°C
V_GS = ±20V
V_GS = 5V, V_DS = 16V, I_D = 5A
V_GS = 5V, V_DS= 100mV, I_D = 5A
V_DS = 16V, I_D = 5A
V_DS = 16V, V_GS = 0
V_DS = 16V, V_GS = 0, f = 1MHz
V_DD = 16V, I_D = 5A, V_GS = 5V
Clamped inductive load
See test diagram Fig 17.
Parameter
Diode Forward
Voltage*k
Reverse Recovery
Charge
Q1
Q2 &
parallel Schottky
Min Typ Max Min Typ Max Units
Conditions
V_SD
– 0.7 1.0 – 0.48 0.52 V I_S = 1A, V_GS = 0V
Q_rr
– 62.3 –
– 8.9
– nC dl/dt = 700A/us
V_DS = 16V, V_GS = 0V, I_S = 5A

m
Repetitive rating; pulse width limited by max. junction temperature.
Combined Q1, Q2 I_RMS @ Pwr V_out pins. Calculated continuous
current based on maximum allowable junction temperature;
‚ Pulse width ≤ 300 µs; duty cycle ≤ 2%.
switching or other losses will decrease RMS current capability
ƒ When mounted on 1 inch square copper board, t < 10 sec.
… When mounted on IRNBPS2 design kit. Measured as device T_J
to Pwr leads (V_in & V_out)
* Devices are 100% tested to these parameters.
2
www.irf.com