IRF7901D1 Datasheet, PDF (1/8 Pages) International Rectifier – Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode

PD- 93844B
IRF7901D1
• Co-Pack Dual N-channel HEXFET^® Power MOSFET
and Schottky Diode
Dual FETKY™
• Ideal for Synchronous Buck DC-DC
Co-Packaged Dual MOSFET Plus Schottky Diode
Converters Up to 5A Peak Output
• Low Conduction Losses
• Low Switching Losses
Device Ratings (Max.Values)
• Low Vf Schottky Rectifier
Q1
Q2
SO-8
Q1
S ource
1
Q1
Gate
2
PGND 3
Q2
Gate
4
8
Pwr
Vin
7
Pwr
Vin
6
Pwr
Vout
5
Pwr
Vout
T op View
V_DS
R_DS(on)
Q_G
Q_sw
V_SD
and Schottky
30V
30V
38 mΩ
32 mΩ
10.5 nC 18.3 nC
3.8 nC 9.0 nC
1.0V
0.52V
Description
The FETKY^™ family of Co-Pack HEXFET^®MOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFET^®MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple
die capability making it ideal in a variety of power applications. With these improvements, multiple devices can
be used in an application with dramatically reduced board space. Internal connections enable easier board
layout design with reduced stray inductance.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Output
Current
(V
GS
≥
4.5V)„
Pulsed Drain Current
T = 100°C
L
Power Dissipationƒ
T_L = 100°C
Junction & Storage Temperature Range
Pulsed Source Current 
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead…
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Symbol
V_DS
V
GS
I
D
I_DM
P_D
T_J, T_STG
I
SM
R_θJA
R_θJL
IRF7901D1
30
±20
6.2
24
2.0
–55 to 150
12
Max.
62.5
25
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
9/19/01