IRF7473 Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, iD=6.9A)

IRF7473
0.028
0.035
0.026
0.024
VGS = 10V
0.030
0.025
ID = 6.9A
0.022
0
20
40
60
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.020
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
400
ID
TOP
1.8A
3.3A
BOTTOM 4.1A
300
200
V (B R )D SS
tp
IAS
VDS
L
RG
12 00VV
tp
D .U .T
IA _S
0.01Ω
15V
DRIVE R
+
- ^VD D
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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