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| IRF7473 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, iD=6.9A) | |||
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IRF7473
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
âââ
âââ
3.5
âââ
âââ
âââ
âââ
âââ
0.11
22
âââ
âââ
âââ
âââ
âââ
âââ
âââ
26
5.5
1.0
250
100
-100
V
V/°C
mâ¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 4.1A Â
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
10 âââ âââ
Qg
Total Gate Charge
âââ 61 âââ
Qgs
Gate-to-Source Charge
âââ 21 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 19 âââ
td(on)
Turn-On Delay Time
âââ 24 âââ
tr
Rise Time
âââ 20 âââ
td(off)
Turn-Off Delay Time
âââ 29 âââ
tf
Fall Time
âââ 11 âââ
Ciss
Input Capacitance
âââ 3180 âââ
Coss
Output Capacitance
âââ 230 âââ
Crss
Reverse Transfer Capacitance
âââ 120 âââ
Coss
Output Capacitance
âââ 830 âââ
Coss
Output Capacitance
âââ 150 âââ
Coss eff. Effective Output Capacitance
âââ 230 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 4.1A
ID = 4.1A
VDS = 50V
VGS = 10V,
VDD = 50V
ID = 4.1A
RG = 6.0â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 80V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
140
4.1
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
55
140
Max.
2.3
55
1.3
âââ
âââ
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 4.1A, VGS = 0V Â
TJ = 25°C, IF = 4.1A
di/dt = 100A/µs Â
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