IRF7473 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, iD=6.9A)

IRF7473
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
0.1
0.01
0.1
6.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
10
5.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
T_J = 150^° C
10
1
0.1
0.01
5
T_J = 25^° C
V DS= 25V
20µs PULSE WIDTH
6
7
8
9
10 11 12
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5
I_D = 6.9A
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3