IRF7473 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, iD=6.9A)

IRF7473
100000
10000
1000
100
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 4.1A
16
12
V_DS = 80V
V_DS = 50V
V_DS = 20V
8
4
0
0
20
40
60
80
100
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
T_J = 25° C
1
0.1
0.0
V _GS = 0 V
0.4
0.8
1.2
1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
10msec
Single Pulse
0.1
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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