IRF6617 Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF6617
+
‚
-

R_G
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-^„ +
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
• di/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* V_GS = 5V for Logic Level Devices
* V_GS=10V
V_DD
I_SD
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
DirectFET™ Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
6
1
3
5
4
7
2
1- Drain
2- Drain
3- Source
4- Source
5- Gate
6- Drain
7- Drain
6
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