IRF6617 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount Techniques
PD - 95847
IRF6617
V_DSS
30V
HEXFET^® Power MOSFET
R_DS(on) max Qg(typ.)
8.1mΩ@V_GS = 10V
11nC
10.3mΩ@V_GS = 4.5V
ST
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, IMPROVING previous best thermal resistance by 80%.
The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
E_AS
I_AR
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
Power Dissipation
d Single Pulse Avalanche Energy
Ù Avalanche Current
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
R_θJA
R_θJA
R_θJC
fj Junction-to-Ambient
gj Junction-to-Ambient
hj Junction-to-Ambient
ij Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
Notes  through ˆ are on page 2
www.irf.com
Max.
30
±20
55
14
11
120
2.1
1.4
42
27
12
0.017
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1
3/12/04