IRF6617 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF6617
1000.0
100.0
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
TJ = 150°C
10.0
1.0
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
60
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
1msec
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
50
40
2.0
30
ID = 250µA
20
1.5
10
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
τ_Cτ
Ri (°C/W)
2.023
19.48
τi (sec)
0.000678
0.240237
τ_{3 τ3}
τ_{4 τ4}
21.78 2.0167
14.71 58
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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