IRF6617 Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

24
ID = 15A
20
16
12
TJ = 125°C
8
4
2.0
TJ = 25°C
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
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IRF6617
120
ID
100
TOP
5.2A
7.9A
BOTTOM 12A
80
60
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
L_D
V_DS
+
V_DD -
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
5