GA150TS60U Datasheet, PDF (6/11 Pages) Integrated Circuit Systems – HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

GA150TS60U
 50 RG1=2=7OΩh;mRG2 = 0 Ω
T _J = 150° C
V_CC = 360V
40 ^VGE ^{= 15V}
30
20
10
0
0
50
100 150 200 250 300
I _C, Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
100
T_J = 125°C
T_J = 25°C
10
1.0
2.0
3.0
4.0
5.0
Forward Voltage Drop - V _FM (V)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
400
V_GE = 20V
T J = 125°C
350 _{V CE measured at terminal (Peak Voltage)}
300
250
200
SAFE O PERATING AREA
150
100
50
0
A
0
100 200 300 400 500 600 700
V_CE , Collector-to-Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
16000
12000
I_F = 300A
IF = 150A
IF = 75A
8000
4000
V_R = 3 6 0V
T_J = 125°C
T_J = 25°C
0
500
1000
1500
2000
di _f /dt - (A/µs)
Fig. 14 - Typical Stored Charge vs. di_f/dt
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