GA150TS60U Datasheet, PDF (5/11 Pages) Integrated Circuit Systems – HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

25000
20000
15000
 ^{VGE = 0V, f = 1MHz}
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
 C_ies
10000
5000
C _oes
C _res
0
1
10
100
V_CE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA150TS60U
 20
V_CC = 400V
I _C = 94A
16
12
8
4
0
0 100 200 300 400 500 600 700
Q_G, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
 ^{VCC = 360V}
V_GE = 15V
T_J = 21525^°°CC
I_C = 150A
25
20
 100 RG1==27OΩh;mRG2 = 0 Ω
V_GE = 15V
V_CC = 360V
10
 I_C = 300 A
 I_C = 150 A
 I_C = 75 A
15
10
0
10
20
30
40
50
RR_GG1, ,GGaateteRReessiisstancee ((OΩh) m)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5