GA150TS60U Datasheet, PDF (4/11 Pages) Integrated Circuit Systems – HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

GA150TS60U
160
120
 3.0
V_GE = 15V
80 us PULSE WIDTH
 I_C = 300 A
80
40
0
25
50
75
100
125
150
T_C , Case Temperature ( ° C)
2.0
 I_C = 150 A
 I_C = 75 A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
S ingle P ulse
(Therm al R esistance)
0.01
0.0001
0.001
0.01
0.1
P_DM
t1
t2
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak TJ = P_DM x Z _thJC + T_C
1
10
100
1000
t ₁ , Rectangular Pulse Duration (Seconds)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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