GA150TS60U Datasheet, PDF (3/11 Pages) Integrated Circuit Systems – HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

GA150TS60U
120
100
80
S q u a re w a v e:
60% of rated
60
v o lta g e
I
40
Ideal diodes
20
0
0.1
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 92 W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
 T_J = 25 ^oC
 T_J = 125 ^oC
100
 VGE = 15V
20µs PULSE WIDTH
10
1
2
3
V_CE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000
100
10
 T_J = 125 ^oC
 T_J = 25 ^oC
 VVCCCE == 252550VVV
58µ0sµPs UPLUSLSEEWWIDIDTTHH
1
5
6
7
8
9
V_GE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3