AUIRFS8409-7P Datasheet, PDF (6/12 Pages) International Rectifier – HEXFETPower MOSFET

4.0
ID = 100A
3.0
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
16
IF = 60A
14 _{VR = 34V}
12 ^{TJ = 25°C}
TJ = 125°C
10
8
6
4
2
0
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
14
IF = 100A
12 ^{VR = 34V}
TJ = 25°C
10 ^{TJ = 125°C}
8
6
4
2
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. di_f/dt
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AUIRFS8409-7P
4.5
4.0
3.5
3.0
2.5
ID = 250μA
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75
-25 25 75 125 175 225
TJ , Temperature ( °C )
Fig 17. Threshold Voltage vs. Temperature
700
IF = 60A
600 VR = 34V
TJ = 25°C
500 _{TJ = 125°C}
400
300
200
100
0
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
450
IF = 100A
400 _{VR = 34V}
350 ^{TJ = 25°C}
TJ = 125°C
300
250
200
150
100
50
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. di_f/dt
April 30, 2013