AUIRFS8409-7P Datasheet, PDF (3/12 Pages) International Rectifier – HEXFETPower MOSFET

AUIRFS8409-7P
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
0.1
0.1
≤60μs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
0.1
≤60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = 100A
VGS = 10V
1.6
1.2
1
VDS = 10V
≤60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1000000
100000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
1000
Ciss
Coss
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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0.8
0.4
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID = 100A
12.0
VDS= 32V
10.0
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0 50 100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013