AUIRFS8409-7P Datasheet, PDF (4/12 Pages) International Rectifier – HEXFETPower MOSFET

1000
TJ = 175°C
100
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
600
Limited By Package
500
400
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
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AUIRFS8409-7P
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
100
Limited by Package
10
1msec
DC
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
48
Id = 2.0mA
47
46
45
44
43
42
41
40
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
3500
3000
2500
2000
ID
TOP 26A
52A
BOTTOM 100A
1500
1000
500
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
April 30, 2013