AUIRFS8409-7P Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
AUIRFS8409-7P
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
0.55mΩ
0.75mΩ
c 522A
240A
Description
Specifically designed for Automotive applications, this HEXFET®
D
D
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
G
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
S
S
SS
S
S
G
D²Pak 7 Pin
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
G
Gate
D
Drain
S
Source
l Heavy Loads
l SMPS
Ordering Information
Base part number
AUIRFS8409-7P
Package Type
D²Pak 7 Pin
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Complete Part Number
AUIRFS8409-7P
AUIRFS8409-7TRL
AUIRFS8409-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Ãd ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Max.
™ 522
™ 369
l ²⁴⁰
1200
Units
A
PD @TC = 25°C _{Maximum Power Dissipation}
375
W
Linear Derating Factor
VGS
Gate-to-Source Voltage
2.5
W/°C
± 20
V
TJ
Operating Junction and
-55 to + 175
TST G
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
e _{EAS (Thermally limited)} Single Pulse Avalanche Energy
Ãe ^EAS (tested)
d _IAR
d _EAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
764
1485
mJ
See Fig. 14, 15, 24a, 24b
A
mJ
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 30, 2013