JANTXVR2N7261U Datasheet, PDF (5/12 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)

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IRHE713O, JANSR2N7261U
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
V_GSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x10¹²
Rad (Si)/Sec Exposure
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Fig 8b. V_DSS Stress Equals
80% of B_VDSS During Radiation
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