JANTXVR2N7261U Datasheet, PDF (1/12 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)

PD - 91806C
RADIATION HARDENED
POWER MOSFET
SURFCACE MOUNT(LCC-18)
IRHE7130
JANSR2N7261U
100V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE7130 100K Rads (Si)
IRHE3130 300K Rads (Si)
IRHE4130 500K Rads (Si)
IRHE8130 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
ID
8.0A
8.0A
8.0A
8.0A
QPL Part Number
JANSR2N7261U
JANSF2N7261U
JANSG2N7261U
JANSH2N7261U
International Rectifier’sRADHardHEXFET^® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
LCC-18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Pre-Irradiation
Units
8.0
5.0
A
32
25
W
0.20
W/°C
±20
V
130
mJ
8.0
A
2.5
mJ
5.5
V/ns
-55 to 150
o_C
300 (for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/28/06