IRG4BC30SS_04 Datasheet, PDF (5/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

2000
1500
1000
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
C_ies
500
0
1
C_oes
C_res
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC30S-SPbF
20 _{VCC = 400V}
I _C = 18A
16
12
8
4
0
0
10
20
30
40
50
60
Q_G , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
V_CC = 480V
V_GE = 15V
T_J = 25 ^° C
3.76 ^IC ^{= 18A}
3.72
3.68
3.64
3.60
0
10
20
30
40
50
R_G , Gate Resistance (OΩhm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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100 _{RG = 23OΩhm}
V_GE = 15V
V_CC = 480V
10
1
I_C = 36A
I_C = 18A
I_C = ^9.9⁰A^A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5