IRG4BC30SS_04 Datasheet, PDF (3/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

IRG4BC30S-SPbF
50
40
30
Square wave:
60% of rated
voltage
20
I
10
Ideal diodes
0
0.1
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 21W
Triangular wave:
I
Clamp voltage:
80% of rated
A
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
100
T_J = 25 ^oC
T_J = 150 ^oC
10
V_GE = 15V
20µs PULSE WIDTH
1
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
T_J = 150 ^oC
10
T_J = 25 ^oC
1
V_CC = 50V
5µs PULSE WIDTH
0.1
5
6
7
8
9
10
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3