IRG4BC30SS_04 Datasheet, PDF (2/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

IRG4BC30S-SPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)CES
Collector-to-Emitter Breakdown Voltage
V_(BR)ECS
Emitter-to-Collector Breakdown Voltage „
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
V_CE(ON)
Collector-to-Emitter Saturation Voltage
V_GE(th)
Gate Threshold Voltage
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage
g_fe
Forward Transconductance …
I_CES
Zero Gate Voltage Collector Current
I_GES
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
600 — —
18 — —
— 0.75 —
— 1.40 1.6
V
V
V/°C
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0A
V_GE = 0V, I_C = 1.0mA
I_C = 18A
V_GE = 15V
— 1.84 — _V
I_C = 34A
See Fig. 2, 5
— 1.45 —
I_C = 18A , T_J = 150°C
3.0 — 6.0
V_CE = V_GE, I_C = 250µA
— -11 — mV/°C V_CE = V_GE, I_C = 250µA
6.0 11 — S V_CE = 100V, I_C = 18A
— — 250 _µA V_GE = 0V, V_CE = 600V
— — 2.0
V_GE = 0V, V_CE = 10V, T_J = 25°C
— — 1000
V_GE = 0V, V_CE = 600V, T_J = 150°C
— — ±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
50 75
7.3 11
17 26
22 —
18 —
540 810
390 590
0.26 —
3.45 —
3.71 5.6
21 —
19 —
790 —
760 —
6.55 —
7.5 —
1100 —
72 —
13 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
I_C = 18A
V_CC = 400V
See Fig. 8
V_GE = 15V
T_J = 25°C
I_C = 18A, V_CC = 480V
V_GE = 15V, R_G = 23Ω
Energy losses include "tail"
See Fig. 9, 10, 14
T_J = 150°C,
I_C = 18A, V_CC = 480V
V_GE = 15V, R_G = 23Ω
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
V_GE = 0V
V_CC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; V_GE = 20V, pulse width limited by
max. junction temperature (See fig. 13b).
‚ V_CC = 80%(V_CES), V_GE = 20V, L = 10µH, R_G = 23Ω,
(See fig. 13a).
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
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