IRG4BC30SS_04 Datasheet, PDF (4/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

IRG4BC30S-SPbF
35
30
25
20
15
10
5
0
25
50
75
100
125
150
T_C , Case Temperature ( ° C)
3.0 _{VGE = 15V}
80 us PULSE WIDTH
2.5
I_C = 36 A
2.0
I_C = 18 A
1.5
I_C = 9.09AA
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
1
D = 0.50
0.20
0.10
PDM
0.1
0.05
t1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
0.01
0.00001
1. Duty factor D = t₁ / t₂
2. Peak T_J = P_DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com