IRFB7430PBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFETPower MOSFET

1000
TJ = 175°C
100
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
47
Id = 1.0mA
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
6.0
4.0
IRFB7430PbF
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
100
Limited by package
10
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
2.5
VDS= 0V to 32V
2.0
1.5
1.0
0.5
0.0
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical C_OSS Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
2.0
0.0
0
200 400 600 800 1000 1200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
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