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| IRFB7430PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRFB7430PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
150
Qg
Total Gate Charge
âââ
Qgs
Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
ià Effective Output Capacitance (Energy Related)
âââ
h Effective Output Capacitance (Time Related)
âââ
Typ.
âââ
300
77
98
202
32
105
160
100
14240
2130
1460
2605
2920
Max.
âââ
460
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
S VDS = 10V, ID = 100A
nC ID = 100A
g VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
ns VDD = 20V
ID = 30A
g RG = 2.7ï
VGS = 10V
pF VGS = 0V
VDS = 25V
Æ = 1.0 MHz
i VGS = 0V, VDS = 0V to 32V
h VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
dv/dt
Diode Forward Voltage
f Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
 âââ âââ 394
A MOSFET symbol
D
showing the
âââ âââ 1576 A integral reverse
G
âââ 0.86 1.2
p-n junction diode.
S
g V TJ = 25°C, IS = 100A, VGS = 0V
âââ 2.7 âââ V/ns TJ = 175°C, IS = 100A, VDS = 40V
âââ 52 âââ ns TJ = 25°C
VR = 34V,
âââ 52 âââ
TJ = 125°C
âââ 97 âââ nC TJ = 25°C
g IF = 100A
di/dt = 100A/μs
âââ 97 âââ
TJ = 125°C
âââ 2.3 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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