IRFB7430PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFB7430PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
10
4.5V
1
0.1
60μs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
1000
100
10
TJ = 175°C
TJ = 25°C
VDS = 25V
60μs PULSE WIDTH
1.0
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
1000
100
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
10
0.1
60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
2.0
ID = 100A
1.8 ^{VGS = 10V}
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
14.0
12.0
ID= 100A
10.0
VDS= 32V
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0 50 100 150 200 250 300 350 400
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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