IRFB7430PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFB7430PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
P_D @T_C = 25°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
E_{AS (tested)}
I_AR
E_AR
e Single Pulse Avalanche Energy
k Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
d Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_JC
R_CS
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface
R_JA
Junction-to-Ambient
Max.
409™
289™
195
1524
375
2.5
± 20
-55 to + 175
300
x x 10lbf in (1.1N m)
760
1360
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
V_(BR)DSS/T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.014
1.0
1.2
–––
–––
–––
–––
–––
2.1
Max.
–––
–––
1.3
–––
3.9
1.0
150
100
-100
–––
Units
Conditions
V
V/°C
m
V
μA
nA

V_GS = 0V, I_D = 250μA
d Reference to 25°C, I_D = 1.0mA
g V_GS = 10V, I_D = 100A
g V_GS = 6.0V, I_D = 50A
V_DS = V_GS, I_D = 250μA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width  400μs; duty cycle  2%.
temperature. Bond wire current limit is 195A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C_oss while V_DS is rising from 0 to 80% V_DSS.
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.15mH
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_ is measured at T_J approximately 90°C..
‰ This value determined from sample failure population,
R_G = 50, I_AS = 100A, V_GS =10V.
„ I_SD  100A, di/dt  990A/μs, V_DD V_(BR)DSS, T_J  175°C.
starting T_J = 25°C, L= 0.15mH, R_G = 50, I_AS = 100A, V_GS =10V.
2
www.irf.com