IRF8113 Datasheet, PDF (5/10 Pages) International Rectifier – Power MOSFET

IRF8113
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
2.2
2.0
1.8
ID = 250µA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
τ_Cτ
Ri (°C/W)
0.924
13.395
τi (sec)
0.000228
0.1728
τ_{3 τ3}
τ_{4 τ4}
22.046 1.5543
14.911 22.5
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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