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| IRF8113 Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET | |||
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IRF8113
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.024 âââ
âââ 4.7 5.6
âââ 5.8 6.8
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 17.2A
e VGS = 4.5V, ID = 13.8A
1.5 âââ 2.2 V VDS = VGS, ID = 250µA
âââ - 5.4 âââ mV/°C
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
73 âââ âââ
âââ 24 36
S VDS = 15V, ID = 13.3A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 6.2 âââ
VDS = 15V
âââ 2.0 âââ nC VGS = 4.5V
âââ 8.5 âââ
ID = 13.3A
âââ 7.3 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 10.5 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 10 âââ nC VDS = 10V, VGS = 0V
âââ 13 âââ
e VDD = 15V, VGS = 4.5V
âââ 8.9 âââ
ID = 13.3A
âââ 17 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 3.5 âââ
Ciss
Input Capacitance
âââ 2910 âââ
VGS = 0V
Coss
Output Capacitance
âââ 600 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 250 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
48
13.3
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 135
âââ âââ 1.0
âââ 34 51
âââ 21 32
A showing the
integral reverse
p-n junction diode.
e V TJ = 25°C, IS = 13.3A, VGS = 0V
e ns TJ = 25°C, IF = 13.3A, VDD = 10V
nC di/dt = 100A/µs
2
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