IRF8113 Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET

PD - 94637A
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
IRF8113
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max _{Qg Typ.}
30V ^5.6m:@V_GS ^{= 10V} 24nC
Isolated DC-DC Converters in Networking
Systems
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
f Power Dissipation
f Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
R_θJA
g Junction-to-Drain Lead
fg Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
1/5/04