IRF7902PBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – Improved Body Diode Reverse Recovery

Q1 - Control FET
2.0
ID = 6.4A
VGS = 10V
1.5
Typical Characteristics
IRF7902PbF
Q2 - Synchronous FET
2.0
ID = 9.7A
VGS = 10V
1.5
1.0
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
60
ID = 6.4A
50
40
30
TJ = 125°C
20
TJ = 25°C
10
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
www.irf.com
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
40
ID = 9.7A
30
20
TJ = 125°C
10
TJ = 25°C
0
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5