IRF7902PBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Improved Body Diode Reverse Recovery

IRF7902PbF
Typical Characteristics
10000
1000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
10000
1000
Coss
100
Crss
100
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
10
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
6.0
ID= 5.1A
5.0
VDS= 24V
4.0
VDS= 15V
VDS= 6.0V
3.0
6.0
ID= 7.8A
5.0
VDS= 24V
4.0
VDS= 15V
VDS= 6.0V
3.0
2.0
2.0
1.0
1.0
0.0
0
1
2
3
4
5
6
QG, Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
0.0
012345678
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs. Gate-to-Source
Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
10
1
100µsec
0.1
1msec
0.01 ^{TA = 25°C}
Tj = 150°C
Single Pulse
0.001
0
1
100msec
10msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
1
100µsec
0.1
1msec
0.01
TA = 25°C
Tj = 150°C
Single Pulse
0.001
0
1
100msec
10msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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