IRF7902PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Improved Body Diode Reverse Recovery

PD - 97194A
IRF7902PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
: 30V Q1 22.6m @V_GS = 10V
: Q2 14.4m @V_GS = 10V
I_D
6.4A
9.7A
Benefits
l Very Low R_DS(on) at 4.5V V_GS
B
l Low Gate Charge
l Fully Characterized Avalanche Voltage
T!
and Current
T!
l 20V V_GS Max. Gate Rating
B!
l Improved Body Diode Reverse Recovery
l Lead-Free
9
T ÃÃ9!
T ÃÃ9!
T ÃÃ9!
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
I_DM
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
P_D @T_A = 25°C
Power Dissipation
P_D @T_A = 70°C
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
fg Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
6.4
9.7
5.1
7.8
51
78
1.4
2.0
0.9
1.3
0.011
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
20
90
Q2 Max.
20
62.5
Units
°C/W
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1
07/10/06