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| IRF7902PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Improved Body Diode Reverse Recovery | |||
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IRF7902PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
âÎVDSS/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
âVGS(th)/âTJ
IDSS
IGSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
 Avalanche Current
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
ÃÂ Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1&Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
âââ
âââ
âââ
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
âââ
13
19
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.023
0.025
18.1
23.8
11.5
14.9
1.8
-4.7
-5.9
âââ
âââ
âââ
âââ
âââ
âââ
4.6
6.5
0.9
1.4
0.5
0.8
1.8
2.3
1.4
2.0
2.3
3.1
3.0
4.4
3.1
3.1
7.4
6.1
8.2
8.6
8.4
8.2
3.4
3.3
580
900
130
190
74
86
Max.
âââ
âââ
âââ
22.6
29.7
14.4
18.7
2.25
âââ
âââ
1.0
150
100
-100
âââ
âââ
6.9
9.8
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
4.9
4.9
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mâ¦
e VGS = 10V, ID = 6.4A
e VGS = 4.5V, ID = 5.1A
e VGS = 10V, ID = 9.7A
e VGS = 4.5V, ID = 7.8A
V VDS = VGS, ID = 25µA
mV/°C
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 5.1A
VDS = 15V, ID = 7.8A
Q1
VDS = 15V
nC VGS = 4.5V, ID = 5.1A
Q2
VDS = 15V
VGS = 4.5V, ID = 7.8A
nC VDS = 16V, VGS = 0V
â¦
Q1
VDD = 15V, VGS = 4.5V
ID = 5.1A
ns
Q2
VDD = 15V, VGS = 4.5V
ID = 7.8A
Clamped Inductive Load
VGS = 0V
pF VDS = 15V
Æ = 1.0MHz
Typ.
âââ
âââ
Q1 Max.
3.4
5.1
Q2 Max.
7.3
7.8
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1
âââ âââ 1.7
A MOSFET symbol
Q2 âââ âââ 2.5
showing the
Q1 âââ âââ 51
A integral reverse
Q2
Q1
Q2
âââ âââ 78
âââ âââ 1.0
âââ âââ 1.0
V
p-n junction diode.
e TJ = 25°C, IS = 5.1A, VGS = 0V
e TJ = 25°C, IS = 7.8A, VGS = 0V
Q1
Q2
âââ 7.8
âââ 12
12
18
e ns Q1 TJ = 25°C, IF = 5.1A,
VDD = 15V, di/dt = 100A/µs
Q1
Q2
âââ 1.5
âââ 3.1
2.3
4.7
e nC Q2 TJ = 25°C, IF = 7.8A,
VDD = 15V, di/dt = 100A/µs
2
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