IRF7835UPBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7835UPbF
20
16
12
8
4
0
25
50
75
100
125
150
TC, CaseTemperature (°C)
2.2
2.0
1.8
1.6
ID = 50µA
1.4
1.2
1.0
0.8
-75 -50 -25 0
25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
τ_{J τJ}
τ_{1 τ1}
R _1R1
Ci= τi/Ri
Ci= τi/Ri
R _2R2
τ_{2 τ2}
R_{3R 3}
Ri (°C/W) τι (sec)
τ_{Cτ 5.599447 0.010553}
τ_{3 τ3}
27.35936 1.1984
17.0458 44.7
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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