IRF7835UPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7835UPbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
1
Ciss
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 15A
10
8
VDS= 25V
VDS= 16V
VDS= 7.6V
6
4
2
0
0 10 20 30 40 50 60
Qg, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec ^100µsec
10msec
0.1 TA = 25°C
Tj = 150°C
Single Pulse
100msec
0.01
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com