IRF7835UPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96080A
IRF7835UPbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low Q_rr
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l Lead-Free
V_DSS
30V
S
S
S
G
HEXFET^® Power MOSFET
R_DS(on) max
Qg
: 4.5m @V_GS = 10V 22nC
AA
1
8
D
2
7
D
3
6
D
4
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
g Junction-to-Drain Lead
R_θJA
fg Junction-to-Ambient
Max.
30
± 20
19
15
150
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 9
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1
09/19/06