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| IRF7835UPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7835UPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30
âââ
âââ
âââ
1.35
âââ
âââ
0.023
3.6
4.5
1.8
-6.0
âââ
âââ
4.5
5.7
2.35
âââ
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 19A
e VGS = 4.5V, ID = 15A
V VDS = VGS, ID = 50µA
mV/°C
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
81 âââ âââ S VDS = 15V, ID = 15A
âââ 22 33
âââ 5.5 âââ
VDS = 15V
âââ 2.1 âââ nC VGS = 4.5V
âââ 7.2 âââ
ID = 15A
âââ 7.2 âââ
See Fig. 16
âââ 9.3 âââ
âââ 14 âââ nC VDS = 16V, VGS = 0V
âââ 1.0 1.7 â¦
âââ 9.6 âââ
VDD = 15V, VGS = 4.5V
âââ 13 âââ
ID = 15A
âââ 14 âââ ns Clamped Inductive Load
âââ 4.6 âââ
âââ 2960 âââ
âââ 610 âââ
âââ 270 âââ
VGS = 0V
pF VDS = 15V
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
240
15
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 3.1
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ 150
âââ âââ 1.0
A showing the
G
integral reverse
S
p-n junction diode.
e V TJ = 25°C, IS = 15A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ 16 24 ns TJ = 25°C, IF = 15A, VDD = 15V
âââ
21
32
e nC di/dt = 320A/µs
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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