IRF7757GPBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET

Power MOSFET Ultra Low On-Resistance

IRF7757GPbF
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
P_DM
0.02
0.01
t₁
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJC + T_C
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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