IRF7757GPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET

Power MOSFET Ultra Low On-Resistance

IRF7757GPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
5 _{ID = 4.8A}
4
V_DS = 16V
V_DS = 10V
3
2
1
0
0
4
8
12
16
20
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
0.1
VGS = 0V
0.5
0.9
1.2
1.6
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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