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| IRF7757GPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET Ultra Low On-Resistance | |||
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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Common Drain Configuration
l Lead-Free
l Halogen-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
PD- 96154A
IRF7757GPbF
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max (mW)
35@VGS = 4.5V
40@VGS = 2.5V
ID
4.8A
3.8A
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Â
Power Dissipation Â
Power DissipationÂ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.8
3.9
19
1.2
0.76
9.5
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-AmbientÂ
Max.
105
Units
°C/W
1
05/14/09
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