IRF7757GPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET

Power MOSFET Ultra Low On-Resistance

IRF7757GPbF
1000
100
VGS
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
100
VGS
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
1
1.5V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
0.1
1.5V
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
1.5
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 4.8A}
1.5
1.0
0.5
V_GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3