IRF7737L2TRPBF Datasheet, PDF (5/10 Pages) International Rectifier – DirectFETPower MOSFET

10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
100
1msec
10msec
10
Tc = 25°C DC
Tj = 175°C
Single Pulse
1
0.10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
10
IRF7737L2TR/TR1PbF
450
400
ID
TOP 13A
350
24A
BOTTOM 94A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Fig 14. Ma^Sx^tai^rm^tinu^gm^TJA^,v^Ja^ulⁿa^cn^tiocⁿh^Te^eE^mn^pe^err^ag^tuy^revs^(°.^CT⁾ emperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
Ri (°C/W)
0.00501
τi (sec)
18.81575
τ_{Cτ 0.93035}
0.022853
τ_{3 τ3}
τ_4τ4
0.17759
0.000126
0.68769 0.00313
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
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1.0E-01
5