IRF7737L2TRPBF Datasheet, PDF (3/10 Pages) International Rectifier – DirectFETPower MOSFET

1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
4.5V
0.1
0.1
≤60μs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
ID = 94A
5
4
3
TJ = 125°C
2
1
TJ = 25°C
0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 3. Typical On-Resistance vs. Gate Voltage
1000
VDS = 25V
≤60μs PULSE WIDTH
100
TJ = -40°C
TJ = 25°C
10
TJ = 175°C
1
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
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IRF7737L2TR/TR1PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
1
0.1
2.8
≤60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
TJ = 125°C
2.2
1.9
1.6
1.3
TJ = 25°C
Vgs = 10V
1.0
5 30 55 80 105 130 155 180 205
ID, Drain Current (A)
Fig 4. Typical On-Resistance vs. Drain Current
2.0
ID = 94A
1.8 VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
3