IRF7737L2TRPBF Datasheet, PDF (4/10 Pages) International Rectifier – DirectFETPower MOSFET

IRF7737L2TR/TR1PbF
5.5
1000
TJ = -40°C
TJ = 25°C
4.5
TJ = 175°C
100
3.5
ID = 1.0A
ID = 1.0mA
10
2.5 ID = 250μA
ID = 150μA
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
300
250
TJ = 25°C
200
150
TJ = 175°C
100
VDS = 10V
50
380μs PULSE WIDTH
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
0 20 40 60 80 100 120 140 160
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance Vs. Drain Current
14
12
ID= 94A
VDS= 32V
VDS= 20V
VDS= 8V
10
8
6
4
2
0
0
25
50
75
100 125
QG, Total Gate Charge (nC)
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
160
140
120
100
80
60
40
20
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature
4
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