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IRF7737L2TRPBF Datasheet, PDF (2/10 Pages) International Rectifier – DirectFETPower MOSFET | |||
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IRF7737L2TR/TR1PbF
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ÎV(BR)DSS/ÎTJ
RDS(on)
VGS(th)
ÎVGS(th)/ÎTJ
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
40 âââ âââ
V VGS = 0V, ID = 250μA
âââ
âââ
0.03
1.5
âââ
1.9
i V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 94A
2.0
âââ
3.0
-10
4.0
âââ
V
mV/°C VDS = VGS, ID = 150μA
100 âââ âââ
S VDS = 10V, ID = 94A
RG
Gate Resistance
âââ 0.6 âââ Ω
IDSS
Drain-to-Source Leakage Current
âââ âââ
5
μA VDS = 40V, VGS = 0V
âââ âââ 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ
âââ
âââ
âââ
100
-100
nA
VGS = 20V
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
âââ 89 134
VDS = 20V, VGS = 10V
Qgs1
Pre-Vth Gate-to-Source Charge
âââ 18 âââ
ID = 94A
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ
8
âââ
nC See Fig.11
âââ 34 âââ
Qgodr
Gate Charge Overdrive
âââ 29 âââ
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 42 âââ
âââ 39 âââ
âââ 12 âââ
âââ 19 âââ
âââ 22 âââ
âââ 14 âââ
âââ 5469 âââ
âââ 1193 âââ
âââ 534 âââ
âââ 4296 âââ
âââ 1066 âââ
âââ 1615 âââ
Ãi nC VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
ns ID = 94A
RG = 1.8Ω
VGS = 0V
VDS = 25V
Æ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
âââ âââ 156
D
A showing the
ISM
Ãg Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
integral reverse
G
âââ âââ 624
âââ âââ 1.3
i p-n junction diode.
V IS = 94A, VGS = 0V
S
âââ 35
âââ 32
53
48
i ns IF = 94A, VDD = 20V
nC di/dt = 100A/μs
 Surface mounted on 1 in. square Cu
(still air).
Notes  through  are on page 10
2
 Mounted to a PCB with small
clip heatsink (still air)
 Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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