IRF7523D1 Datasheet, PDF (5/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V)

IRF7523D1
Power Mosfet Characteristics
400
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds S HO RTE D
C _rss = C _gd
C _oss = C _ds + C _gd
300
C _{is s}
C _oss
200
20
I_D = 1.7A
16
12
8
V _DS = 24V
V _DS = 15V
100
C rss
0
A
1
10
100
V _DS , Drain-to-Source Voltage (V)
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
P_DM
0.01
t₁
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJC + T_C
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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