IRF7523D1 Datasheet, PDF (4/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V)

IRF7523D1
2.0
ID = 1.7A
Power Mosfet Characteristics
0.3
1.5
VGS = 10V
0.2
1.0
0.1
0.5
VGS = 4.5V
0.0
-60
-40 -20 0
V_GS = 10V
A
20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
0.0
0
A
2
4
6
8
,^{I , Drain Current (A)}
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.14
0.12
0.10
I
= 2.7A
0.08
0.06
2
A
6
10
14
/5 ^V
, Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
10µs
100µs
1
1ms
T_A = 25°C
T_J = 150°C
S ingle P ulse
0.1
1
10
10ms
A
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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